Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2011-01-04
2011-01-04
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C438S095000, C438S200000, C438S201000, C438S202000, C438S203000, C438S204000, C438S597000, C438S625000, C438S626000, C438S627000, C438S628000, C438S629000, C257S002000, C257S005000, C257S041000, C257S050000, C257S003000, C257S004000, C257S529000, C257S530000, C257SE21008, C257SE21019
Reexamination Certificate
active
07863173
ABSTRACT:
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.
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Notice of Reasons for Refusal, Korean Application No. 10-2007-0060442, Mar. 26, 2008.
Kang Shin-Jae
Lim Hyun-seok
Lim Nak-Hyun
Oh Gyuhwan
Park In-sun
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Singal Ankush k
Toledo Fernando L
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