Variable resistance memory devices and methods of forming...

Details Variable resistance memory devices and methods of forming... Variable resistance memory devices and methods of forming...

2010-01-05

2011-12-06

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S253000, C257SE47005

Reexamination Certificate

active

08071423

ABSTRACT:
Provided are variable resistance memory devices and methods of forming the variable resistance memory devices. The methods can include forming an etch stop layer on an electrode, forming a molding layer on the etch stop layer, forming a recess region including a lower part having a first width and an upper part having a second width by recessing the etch stop layer and the molding layer, and forming a layer of variable resistance material in the recess region.

REFERENCES:
patent: 7473597 (2009-01-01), Lee et al.
patent: 2005/0130367 (2005-06-01), Lee et al.
patent: 2007-129200 (2007-05-01), None
patent: 100791694 (2007-12-01), None

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