Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-01-23
2007-01-23
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C257S037000, C257SE21009
Reexamination Certificate
active
11061920
ABSTRACT:
The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
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Adachi Hideaki
Kanno Tsutomu
Odagawa Akihiro
Ohnaka Kiyoshi
Sugita Yasunari
Ho Hoai V.
McDermott Will & Emery LLP
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