Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-23
1996-10-08
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257364, 257368, 257379, 257392, 257401, 327379, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055634397
ABSTRACT:
A variable operation speed MOS transistor having a source, a drain and a gate with a plurality of contacts formed thereon. One end of the gate of the variable operation speed MOS transistor is connected to drains/sources of first MOS transistors, while the plurality of the contacts formed on the gate of the variable operation speed MOS transistor are connected to the drains/sources of second MOS transistors, which are of an opposite type to that of the first MOS transistors, and the source or drains of which are connected to Vcc. Input signals are supplied to the respective gates of the first and second MOS transistors in such a manner as to adjust the turn-on and turn-off speeds of the variable operation speed MOS transistor.
REFERENCES:
patent: 4771195 (1988-09-01), Stein
Chung Jin Y.
Khang Chang M.
Kwak Deog Y.
Goldstar Electron Co. Ltd.
Loke Steven H.
Loudermilk Alan R.
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