Variable frequency oscillator controlled EEPROM charge pump

Static information storage and retrieval – Read/write circuit – Differential sensing

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365212, 365226, 327513, G11C 704

Patent

active

054187516

ABSTRACT:
Semiconductor circuit provides an EEPROM programming charge pump (18), and includes a leakage current measuring device (12), a plurality of interconnected current mirrors, and a current controlled oscillator (16) for providing programming power to such EEPROM. The leakage current sensor (12) generates current nonlinearly related to device ambient temperature of the semiconductor circuit, the current mirrors combining and scaling the leakage current (14) with a constant current to provide a composite current altering frequency of the oscillator (16). The oscillator output is constrained accordingly to provide EEPROM charge pump (18) programming power proportional to the oscillator (16) frequency for ensuring that only that amount of programming power appropriate to the ambient temperature is delivered, achieving high economy of total EEPROM programming power utilization, as for an EEPROM of a miniaturized, self-contained responder of a read/write transponder system resident on a single semiconductor integrated circuit chip.

REFERENCES:
patent: 3701004 (1972-10-01), Tuccinardi
patent: 3713033 (1973-01-01), Frerking
patent: 3725789 (1973-04-01), Mager
patent: 5053774 (1991-10-01), Schuermann et al.
patent: 5173876 (1992-12-01), Kawashima et al.
patent: 5197033 (1993-03-01), Watanabe et al.
patent: 5200654 (1993-04-01), Archer

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