Variable conducting element and method of programming

Details Variable conducting element and method of programming Variable conducting element and method of programming

1997-12-01

1999-03-23

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122, G11C 1124

Patent

active

058869204

ABSTRACT:
A variable conducting element (10) and method for programming a constant current or constant resistance provided at output terminals (24 and 26) of a ferroelectric transistor (12). The ferroelectric transistor (12) has portions of a ferroelectric material (32A) programmed having up-polarization states separated by domain walls (34) from portions of a ferroelectric material (32B) programmed having down-polarization states. The portion of the ferroelectric material (32A) programmed in the up-polarization state forms current conduction channels between a source region (23) and a drain region (25) of the ferroelectric transistor (12). The ferroelectric transistor (12) is programmed through a capacitor (14) to adjust the charge supplied to a control terminal (22) of the ferroelectric transistor (12).

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