Variable capactor structure and method of manufacture

Details Variable capactor structure and method of manufacture Variable capactor structure and method of manufacture

2007-01-02

2007-01-02

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S313000, C257S596000, C257S599000, C257SE27092, C257SE27093

Reexamination Certificate

active

10921457

ABSTRACT:
A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped well has a cavity. The first type ion-doped buried layer is in the substrate underneath the first type ion-doped well. The first type ion-doped buried layer and the first type ion-doped well are connected. The second type ion-doped region is at the bottom of the cavity of the first type ion-doped well. The conductive layer is above and in connection with the first type ion-doped buried layer.

REFERENCES:
patent: 4694561 (1987-09-01), Lebowitz et al.
patent: 6835977 (2004-12-01), Gan et al.

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