Variable capacitor and method for fabricating the same

Details Variable capacitor and method for fabricating the same Variable capacitor and method for fabricating the same

1997-09-03

1999-10-12

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257313, 257595, 257596, 257598, H01L 27108, H01L 2976, H01L 2993

Patent

active

059659122

ABSTRACT:
A voltage variable capacitor (10) fabricated on a semiconductor substrate (11) includes a gate structure (62) and a well (22) under the gate structure (62). A heavily doped buried layer (15) and a heavily doped contact region (31) in the semiconductor substrate (11) form a low resistance conduction path from the well (22) to a surface (17) of the semiconductor substrate (11). A multi-finger layout is used to construct the voltage variable capacitor (10). In operation, when a voltage applied across the voltage variable capacitor (10) changes, the width of depletion region in the well (22) changes, and the capacitance of the voltage variable capacitor (10) varies accordingly.

REFERENCES:
patent: 5173835 (1992-12-01), Cornett et al.
patent: 5192871 (1993-03-01), Bamakrishnan et al.
patent: 5405579 (1995-04-01), Melzer et al.

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