Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2005-12-27
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
30, 30
Reexamination Certificate
active
06979852
ABSTRACT:
A variable capacitance formed in a semiconductor substrate with a ribbed surface, having a first electrode formed of all the ribs protruding from the substrate, of portions of the substrate underlying the ribs, and of at least portions of the substrate separating the bases of two ribs, having a second electrode superposed to at least one portion of the first electrode. The ribs are irregular in terms of cross-section and/or planar base surface area.
REFERENCES:
patent: 4017885 (1977-04-01), Kendall et al.
patent: 2 389 237 (1978-11-01), None
French Search Report from French Patent Applicatioin No. 02/11848, filed Sep. 25, 2002.
Jorgenson Lisa K.
Morris James H.
Rose Kiesha
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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