Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-28
2010-06-01
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S595000
Reexamination Certificate
active
07728377
ABSTRACT:
Parallel plate tunable varactors having a bulk capacitance contribution to a total capacitance increased compared to a fringing capacitance contribution are disclosed. The contribution of the bulk capacitance to the total capacitance of an exemplary BST varactor is increased by increasing the area/perimeter ratio of the active region, thereby improving the tunability and other properties of the varactor. In an exemplary embodiment, an active region of the varactor has a lateral shape with a perimeter that is less than a perimeter of an equivalent area square. In various exemplary embodiments, the shape of the active region may be substantially circular or substantially octagonal. Methods for fabricating and designing such varactors are also disclosed.
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Elsass Christopher R.
York Robert Armstrong
Agile RF, Inc.
Fenwick & West LLP
Jahan Bilkis
Louie Wai-Sing
LandOfFree
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