Varactor and differential varactor

Details Varactor and differential varactor Varactor and differential varactor

2005-09-13

2005-09-13

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S595000, C257S598000

Reexamination Certificate

active

06943399

ABSTRACT:
A varactor is provided. The varactor includes a second type substrate, two gate structures, a first type doped region and a second type doped region. The two gate structures are disposed over the substrate, and each of the gate structures includes an inter-gate dielectric layer and a gate conductive layer. The first type doped region is disposed in the substrate between the two gate structures. The second type doped region is disposed in the substrate at a side of the two gate structures apart from the first type doped region. The first type doped region is electrically connected to a first electrode, and second type doped region is electrically connected to a second electrode, and the two gate structures are electrically connected to the first electrode or the second electrode.

REFERENCES:
patent: 6407412 (2002-06-01), Iniewski et al.
patent: 6521939 (2003-02-01), Yeo et al.

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