Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-10-06
2009-11-17
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S595000, C257S596000
Reexamination Certificate
active
07619273
ABSTRACT:
A varactor comprising a first layer separated from a second layer by an insulating layer, wherein the first layer is a first type of semiconductor material and the second layer is a second type of semiconductor material and the insulation layer is arranged to allow an accumulation region to be formed in the first layer and second layer when a positive bias is applied to the first layer and the second layer and a depletion region to be formed in the first layer and second layer when a negative bias is applied to the first layer and the second layer.
REFERENCES:
patent: 6096619 (2000-08-01), Yamamoto et al.
patent: 6172378 (2001-01-01), Hull et al.
patent: 6407312 (2002-06-01), Banno et al.
patent: 6906904 (2005-06-01), Maget
patent: 2002/0140109 (2002-10-01), Keshavarzi et al.
patent: 2005/0067674 (2005-03-01), Maget
Maget, et al., “Novel Varactors in BiCMOS Technology with Improved Characteristics”, 13th Int. Conf. on Microelectronics 2001, Oct. 29-31, 2001, pp. 59-62.
Freescale Semiconductor Inc.
Potter Roy K
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