Vapor transport process for growing selected compound semiconduc

Details Vapor transport process for growing selected compound semiconduc Vapor transport process for growing selected compound semiconduc

1979-11-08

1981-11-10

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG77, 23305R, C30B 2502

Patent

active

042996490

ABSTRACT:
The specification describes a process for growing selected compound semiconductors of high stoichiometry and purity and includes the steps of providing both a dynamic vacuum and a predetermined temperature profile in a container or tube containing a chosen semiconductor source material. The dynamic vacuum is used to create a predetermined minimum overpressure. P.sub.min, in this container with respect to the vapor pressure of the source material, while simultaneously removing impurities through in opening in the container during the crystal growth process. This process involves the vapor transport of elements of the selected compound semiconductor from the source material to a suitable support member, such as a graphite crucible which is maintained at a predetermined uniform controlled temperature. Alternatively, the crystal growth process can be in the form of a vapor phase epitaxial process wherein the selected compound semiconductor is epitaxially deposited on a chosen semiconductor substrate whose temperature is also closely controlled.

REFERENCES:
patent: 3121062 (1964-02-01), Gould
Boyd, J., of Applied Phys. V30 #2, Feb. '59, pp. 176-179.
Hillin J., of Crystal Growth, 13/14 5'72, pp. 624-634.

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