Vapor transport process for growing selected compound semiconduc

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156DIG77, 156DIG72, 156DIG89, C30B 2306

Patent

active

044392664

ABSTRACT:
Disclosed herein is a process for growing II-IV semiconductor crystals which includes providing both a II-IV semiconductor source material and a crystal growth support member in a predetermined dynamic vacuum. This vacuum is sufficient to create a predetermined overpressure at the source material and simultaneously remove impurities therefrom. The temperature of the support member is initally raised to a predetermined level above the temperature of the source material to thereby prevent vapor transport between the two. Then, the temperature of the support member is lowered to a predetermined value below that of the source material to produce a disassociation of elemental gases from the source material and initiate controlled vapor transport of the elemental gases from the source material to the support member. In this manner, compound semiconductor crystals of high purity and stoichiometry are formed on the surface of the support member.

REFERENCES:
patent: 4030964 (1977-06-01), Schieber et al.
J1 of Vacuum Science and Technology, V8 No. 3, May-Jun. 1971.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vapor transport process for growing selected compound semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor transport process for growing selected compound semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor transport process for growing selected compound semiconduc will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1753939

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.