Vapor phase repair and pore sealing of low-K dielectric...

Details Vapor phase repair and pore sealing of low-K dielectric... Vapor phase repair and pore sealing of low-K dielectric...

2011-08-16

2011-08-16

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S780000, C438S781000, C257S642000, C257SE21211, C257SE21212, C257SE21214, C257SE21241

Reexamination Certificate

active

07998875

ABSTRACT:
A method of treating a nanoporous low-k dielectric material formed on a semiconductor substrate is provided. The low-k dielectric material has etched openings with an etch damaged region containing silanol groups on exterior surfaces of the etched openings and on interior surfaces of interconnected pores. First, the low-k dielectric material is contacted with a vapor phase catalyst in an amount effective to form hydrogen bonds between the catalyst and the silanol groups in the etch damaged region, forming a catalytic intermediary. Second, the low-k dielectric material is contacted with a vapor phase alkoxysilane repair agent in an amount effective to react with about 50% or more of the silanol groups in the etch damaged region, such that the alkoxysilane repair agent reacts with the catalytic intermediary; and/or the low-k dielectric material is contacted with a vapor phase alkoxysilane sealing agent in an amount effective to prevent diffusion of an overlying barrier layer into the interconnected pores, such that the alkoxysilane sealing agent reacts with the catalytic intermediary.

REFERENCES:
patent: 6455130 (2002-09-01), Wallace et al.
patent: 6495479 (2002-12-01), Wu et al.
patent: 6670022 (2003-12-01), Wallace et al.
patent: 2007/0298163 (2007-12-01), DeYoung
International Search Report and Written Opinion mailed Mar. 27, 2009 for PCT/US2008/013471.

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