Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2007-06-05
2007-06-05
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S103000, C117S106000
Reexamination Certificate
active
10868313
ABSTRACT:
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.
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Biwa Goshi
Doi Masato
Okuyama Hiroyuki
Oohata Toyoharu
Bell Boyd & Lloyd LLP
Dickey Thomas L.
Sony Corporation
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