Vapor phase growth method

Details Vapor phase growth method Vapor phase growth method

1997-04-21

2000-05-09

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438681, 438683, 438685, H01L 2144

Patent

active

060603917

ABSTRACT:
A heating mechanism for heating a substrate is disposed in a growth chamber, a bulb capable of controlling the quantity of gas flowing into the growth chamber is provided between a plurality of organic metal gas sources and the growth chamber. A plasma chamber for inert gas having a transparent portion is provided, the plasm chamber receiving a part of an organic metal raw material gas supplied to the growth chamber through an orifice. The plasma chamber is provided with an exhaustion system performing a differential air exhausting for the plasma chamber and the growth chamber. Provided is an optical system for measuring an light emission intensity by separating emitted light characteristic of a metal in the organic metal raw material gas, the light is emitted from the metal by exciting the organic metal raw material gas partially supplied to the plasma chamber from the growth chamber through the orifice.

REFERENCES:
patent: 5202283 (1993-04-01), Younger et al.
patent: 5691009 (1997-11-01), Sandhu
patent: 5840628 (1998-11-01), Miyamoto

Affiliated with

Also associated with

Rating

Vapor phase growth method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor phase growth method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor phase growth method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1064574