Vapor phase growth method

Details Vapor phase growth method Vapor phase growth method

1982-08-27

1985-09-03

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

427 93, 427 94, 156DIG64, C30B 2502

Patent

active

045390681

ABSTRACT:
A plasma chemical vapor deposition method for forming a film on a substrate which is placed on one of a pair of electrodes oppositely arranged within the reaction chamber of a reactor. A plurality of power generators of different frequencies are applied to the electrodes to excite reactive gases introduced into the reaction chamber, whereby the reactive gases are transformed into a plasma and a desired film is formed on the substrate. Film with a small number of pinholes was formed at a relatively high deposition rate by combinations of power generator frequencies of, for example, 13.56 MHz and 1 MHz, 13.56 MHz and 50 KHz, and 5 MHz and 400 KHz.

REFERENCES:
patent: 3472751 (1969-10-01), King
patent: 3600126 (1971-08-01), Hellund
patent: 3876373 (1975-04-01), Glyptis
patent: 4173661 (1979-11-01), Bourdon

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