Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-06-06
1999-02-09
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1600
Patent
active
058688501
ABSTRACT:
A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.
REFERENCES:
patent: 5063031 (1991-11-01), Sato
Honda Takaaki
Ichishima Masahiko
Mitani Shinichi
Ohashi Tadashi
Shimada Masaki
Bueker Richard
Toshiba Ceramics Co. Ltd.
Toshiba Kikai Co., Ltd.
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