Vapor-phase epitaxial growth process by a hydrogen pretreatment

Details Vapor-phase epitaxial growth process by a hydrogen pretreatment Vapor-phase epitaxial growth process by a hydrogen pretreatment

1990-09-26

1993-06-22

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 437 81, 437946, H01L 2120

Patent

active

052214125

ABSTRACT:
The present invention provides a process for the vapor-phase epitaxial growth of a Si single crystal film on a Si single crystal substrate using diluted disilane, in which the process is carried out at a linear speed of diluted disilane on the surface of the Si single crystal substrate is in the range of 5 to 100 cm/min. and, as desired, the substrate is subjected to the heat pretreatment in a hydrogen stream at a temperature of 1,000.degree. C. or higher for a period of 30 minutes or longer before the epitaxial growth.

REFERENCES:
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 4966861 (1990-10-01), Mieno et al.
patent: 5011789 (1991-04-01), Burns
Srinivasan, "Recent Advances in Silicon Epitaxy and Its Application to High Performance Integrated Circuits", Journal of Crystal Growth 70 (1984) pp. 201-217.
Wolf et al. Silicon Processing for the VLSI Era, Lattice Press p. 124 (1986).
IBM Technical Disclosures, bulletin, vol. 26, No. 3A, Aug. 1983, pp. 918-910.
Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo 1986, pp. 49-52.
J. Electrochem. Soc., vol. 134, No. 9, Sep. 1987, pp. 2320-2323.
J. Electrochem. Soc., vol. 134, No. 6, Jun. 1987, pp. 1518-1523.

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