Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-05-17
1993-05-25
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156611, 156612, 156613, 156DIG73, 156DIG80, 156DIG102, 156DIG103, C30B 2500
Patent
active
052136540
ABSTRACT:
A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.
REFERENCES:
patent: 4234355 (1980-11-01), Meinders
patent: 4343832 (1982-08-01), Smith et al.
patent: 4737233 (1988-04-01), Kamgar et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4859625 (1989-08-01), Matsumoto
patent: 4975252 (1990-12-01), Nishizawa et al.
"Photolysis-Assisted OMVPE Growth of CdTe"; Kisker et al; Materials Letters vol. 3, No. 12; pp. 485-488.
Extended Abstracts of the 36th Spring Meeting of the Japan Society of Applied Physics and Related Societies, Chiba, Mar., 28a-Y4, Y. Sakuma et al, p. 243.
Extended Abstracts of the 36th Spring Meeting of the Japan Society of Applied Physics and Related Societies, Chiba, Mar., 28a-Y7, S. Gato et al, p. 244.
Ishikawa Hironori
Kawakyu Yoshito
Mashita Masao
Sasaki Masahiro
Garrett Felisa
Kabushiki Kaisha Toshiba
Kunemund Robert
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