Vapor-phase epitaxial growth method

Details Vapor-phase epitaxial growth method Vapor-phase epitaxial growth method

2005-12-06

2005-12-06

Schillinger, Laura M (Department: 2813)

Material or article handling

Elevator or hoist and loading or unloading means therefor

With external cooperating movable feeding or discharging means

C414S804000, C414S785000, C118S725000, C118S730000

Reexamination Certificate

active

06971835

ABSTRACT:
A single opening is formed in a central portion of a susceptor of a vapor phase epitaxial growth system. Consequently, any dopant diffused off outwardly from the back surface of a wafer during an epitaxial growth process can be exhausted through the opening to the beneath side with respect to the susceptor. As a result, it may become difficult for auto-doping to be induced, even with no protective film formed on a back surface of the wafer. Uniformity in a dopant concentration in the surface may be improved and thus a resistivity may be made uniform. Further, since a temperature of the back surface of the wafer is measured through the opening, a heating temperature can be controlled stably, thus allowing a precise temperature control thereof. Consequently, the epitaxial film as well as the distribution of its resistivity may be made uniform across the entire wafer.

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patent: 6293749 (2001-09-01), Raaijmakers et al.
patent: 2003/0119283 (2003-06-01), Ishibashi et al.

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