Fishing – trapping – and vermin destroying
Patent
1990-01-30
1991-11-12
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437225, 437234, 148 33, 148DIg110, 148DIG65, H01L 2120
Patent
active
050647784
ABSTRACT:
A vapor-phase epitaxial growth method for producing a Groups III-V compound semiconductor containing arsenic by vapor-phase epitaxial growth using arsenic trihydride as an arsenic source is disclosed, wherein said arsenic trihydride has a volatile impurity concentration of not more than 1.5 molppb on a germanium tetrahydride conversion. The resulting epitaxial crystal has a low residual carrier concentration and is applicable to a field effect transistor.
REFERENCES:
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patent: 4935381 (1990-06-01), Speckman et al.
patent: 4980204 (1990-12-01), Fujii et al.
S. J. Bass, "Growth of Semi-Insulating Epitaxial Gallium Arsenide by Chromium Doping in the Metal-Alkyl+Hydride System", Journal of Crystal Growth, vol. 44, (1978), pp. 29-36.
T. Nakanishi et al., "Growth of High-Purity GaAs Epilayers by MOCVD and their Applications to Microwave MESFET's", Journal of Crystal Growth, vol. 55, (1981), pp. 255-262.
H. M. Cox et al., "Characteristics of an AsCl3/Ga/H2 Two-Bubbler GaAs CVD System for MESFET Applications", Inst. Phys. conf. Ser., No. 33b, (1977), Chap. 1, pp. 11-22.
The 46th Ohyo Butsuri Gakkai Yokoshu, 2a-E-3, (1985) (translation attached).
M. Hata et al., "Residual Impurities in Epitaxial Layers Grown by MOVPE", Journal of Crystal Growth, No. 93, 1988, North-Holland, Amsterdam (NL), pp. 543-549.
Fukuhara Noboru
Hata Masahiko
Maeda Takayoshi
Watanabe Tadeshi
Dang Trung
Hearn Brian E.
Sumitomo Chemical Co,. Ltd.
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