Vapor HF etch process mask and method

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask resist contains organic compound

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S058000

Reexamination Certificate

active

07338614

ABSTRACT:
A method of processing a semiconductor wafer provides a wafer, and then forms an organic mask on at least a portion of the wafer. The method then applies a vapor etching process to the wafer through holes in the organic mask.

REFERENCES:
patent: 5110697 (1992-05-01), Lamb et al.
patent: 5399462 (1995-03-01), Sachdev et al.
patent: 5939633 (1999-08-01), Judy
patent: 6074951 (2000-06-01), Kleinhenz et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6162585 (2000-12-01), Zhang et al.
patent: 6268232 (2001-07-01), Skapa et al.
patent: 6505511 (2003-01-01), Geen et al.
patent: 6511859 (2003-01-01), Jiang et al.
patent: 2004/0026366 (2004-02-01), Sharon et al.
patent: 2004-004345 (2004-01-01), None
Ben-Hamida et al.Anhydrous HF etching for stiction-free MEMS process, Micromachine Devices, vol. 5, No. 6, Jun. 2000, 2 pages.
Hanestad et al.Stiction-Free Release Etch with Anhydrous HF/Water Vapor Processes, FSI re-Print of Paper Presented at SPIE MEMS Conference, Oct. 2001, 11 pages.
Marie A. LesterSelective Material Removal for Nanostructure Formation, Semiconductor International, vol. 26, No. 6, Jun. 2003, p. 40.
Patent Abstracts of Japan, vol. 004, No. 087, Jun. 21, 1980 and JP 55 055532 A (Chiyou LSI Giijutsu Kenkyu Kumiai), Apr. 23, 1980, one page.
C. Johnson, Jr. and B. PatnaikPolymide Mask for Reactive Ion Etching of Metal Lines, IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. 1979, pp. 1446-1448.
P. GoriInternational Search Report and Written Opinion of the International Searching Authority, PCT/US2006/012456, Aug. 31, 2006, 11 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vapor HF etch process mask and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor HF etch process mask and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor HF etch process mask and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2791832

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.