Vapor deposition of single crystal gallium nitride

Details Vapor deposition of single crystal gallium nitride Vapor deposition of single crystal gallium nitride

1976-03-17

1979-03-13

Emery, S. J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156614, 156DIG99, 156605, 423409, 148175, 252 623GA, 427 85, B01J 1732, C01B 2106, C01G 1500

Patent

active

041441168

ABSTRACT:
Method of manufacturing gallium nitride crystals by reaction of galium halide and ammonia in which free hydrogen chloride is introduced into the reaction and deposition zones.

REFERENCES:
patent: 3178313 (1965-04-01), Moest
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patent: 3829556 (1974-08-01), Logan et al.
patent: 3888705 (1975-06-01), Fletcher et al.
patent: 3901746 (1975-08-01), Boucher
patent: 3922475 (1975-11-01), Manasevit
patent: 3925119 (1975-12-01), Philbrick et al.
Ban, "Mass Spectrometric Studies of Vapor-Chase Crystal Growth", J. Electrochem. Soc. vol. 119, No. 6, pp. 761-765 (Jun. 1972).
Shintani et al., "Kinetics of the Epitaxial Growth of GaN Using Ga, HCl, and NH.sub.3 ", J. Crystal Growth, 22 (1974), 1-5.
Maruska et al., "The Preparation & Properties of Vapor-Deposited Single-Crystalline GaN", Applied Physics Letters, vol. 15, No. 10, pp. 327-329, Nov. 15, 1969.

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