Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE21001, C438S787000
Reexamination Certificate
active
08008743
ABSTRACT:
This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.
REFERENCES:
patent: 4386117 (1983-05-01), Gordon
patent: 4474642 (1984-10-01), Nakane et al.
patent: 4512862 (1985-04-01), Rigby
patent: 4723978 (1988-02-01), Clodgo et al.
patent: 4792463 (1988-12-01), Okada et al.
patent: 5389401 (1995-02-01), Gordon
patent: 5403630 (1995-04-01), Matsui et al.
patent: 5710075 (1998-01-01), Tseng
patent: 5922787 (1999-07-01), Kondo et al.
patent: 6090442 (2000-07-01), Klaus et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6258707 (2001-07-01), Uzoh
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6339004 (2002-01-01), Kim
patent: 6342432 (2002-01-01), Wang
patent: 6395209 (2002-05-01), Yoshida et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6867152 (2005-03-01), Hausmann et al.
patent: 6949269 (2005-09-01), Seidl et al.
patent: 7064227 (2006-06-01), Lei et al.
patent: 7097878 (2006-08-01), Rulkens et al.
patent: 7109129 (2006-09-01), Papasouliotis
patent: 7129189 (2006-10-01), Hausmann et al.
patent: 7135418 (2006-11-01), Papasouliotis
patent: 7148155 (2006-12-01), Tarafdar et al.
patent: 7157385 (2007-01-01), Derderian et al.
patent: 7163899 (2007-01-01), Cho et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0004281 (2002-01-01), Lee et al.
patent: 2002/0018849 (2002-02-01), George et al.
patent: 2002/0102814 (2002-08-01), Olsen
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2003/0129087 (2003-07-01), Barbee et al.
patent: 2004/0018694 (2004-01-01), Lee et al.
patent: 2006/0046426 (2006-03-01), Sandhu et al.
patent: 2006/0046518 (2006-03-01), Hill et al.
patent: 2006/0110936 (2006-05-01), Hill et al.
patent: 2006/0246719 (2006-11-01), Rueger et al.
patent: 43/16883 (1994-11-01), None
patent: 0560617 (1993-09-01), None
patent: 1067595 (2001-01-01), None
patent: 1067595 (2002-01-01), None
patent: 3177560 (1991-08-01), None
patent: 04359515 (1992-11-01), None
patent: 2001074931 (2001-03-01), None
patent: 2002093803 (2002-03-01), None
patent: 2002093804 (2002-03-01), None
patent: 10-2005-0039421 (2005-04-01), None
patent: 156980 (1998-07-01), None
patent: 97/38355 (1997-10-01), None
patent: 98/15669 (1998-04-01), None
patent: 99/29924 (1999-06-01), None
patent: 99/29926 (1999-06-01), None
patent: 01/27347 (2001-04-01), None
patent: 01/45158 (2001-06-01), None
patent: 02/27063 (2002-04-01), None
Becker, et al. “Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido) tungsten and ammonia,” Applied Physics Letters, vol. 82 (14), pp. 2239-2241 (2003).
Coltrin, et al., “Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS),”Thin Solid Films, vol. 365, pp. 251-263 (2000).
Ferguson, et al., “Atomic Layer Deposition of Al2O3and SiO2on BN Particles Using Sequential Surface Reactions,”Applied Surface Science, vols. 162-163, pp. 280-292, (2000).
Ferguson, et al., “Atomic Layer Deposition of SiO2Films on BN Particles Using Sequential Surface Reactions,”Chem. Mater, vol. 12, pp. 3472-3480 (2000).
Gasser, et al., “Qusai-Monolayer Deposition of Silicon Dioxide,”Thin Solid Films, vol. 250, pp. 213-218 (1994).
George, et al., “Atomic Layer Controlled Deposition of SiO2and Al2O3Using ABAB . . . binary reaction sequence chemistry,”Appl. Surf. Sci., 82/83, pp. 460-467 (1994).
Hausmann, et al., “Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates,”Science, vol. 298. pp. 402-406 (2002).
Ikeda, et al., “Ozone/Organic-Source APCVD for USLI Reflow Glass Films,”NEC Research&Development, No. 94, pp. 1-7 (1989).
Kingon, et al., “Alternative dielectrics to silicon dioxide for memory and logic devices,”Nature, vol. 406, pp. 1032-1038, (2000).
Klaus, et al., “Atomic Layer Deposition of SiO2at Room Temperature Using NH3-catalyzed Sequential Surface Reactions,”Surf. Sci., vol. 447, pp. 81-90 (2000).
Klaus, et al., “Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions,”Surface Review and Letters, vol. 6(3), pp. 435-448 (1999).
Lee, et al., “Mass Production Worthy HfO2-Al2O3Laminate Capacitor Technology using Hf Liquid Precursor for Sub-100nm DRAMs,” Presented at IEEE IEDM (International Electronic Devices Meeting), San Francisco, CA, Dec. 9-11, 2002.
McIvor, et al., “Preparation and Toxicity of Some Alkyl Thiopyrophosphates,”Canadian J. Chemistry, vol. 34, pp. 1825-1827 (1956).
Morishita, et al., “New Substances for Atomic-Layer Deposition of Silicon Dioxide,”J. Non-Crystalline Solids, vol. 187, pp. 66-69 (1995).
Okamoto, et al., “Convenient Synthetic Route To Mono-Or Dialkyl Phosphate From Inorganic Phosphorus Acids,”Phosphorus, Sulfur and Silicon, vol. 55, pp. 195-200 (1991).
Park, et al., “Mass-Productive Ultra-Low Temperature ALD SiO2Process Promising for Sub-90nm Memory and Logic Devices,” Presented at IEEE IEDM (International Electron Devices Meeting), San Francisco, CA, Dec. 9-11, 2002.
Ritala, “Advanced ALE processes of amorphous and polycrystalline films,”Applied Surface Science, vol. 112, pp. 223-230, (1997).
Ritala, et al., “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources,”Science, vol. 288, pp. 319-321, (2000).
Yamaguchi, et al., “Atomic-Layer Chemical-Vapor-Deposition of Silicon Dioxide Films with an Extremely Low Hydrogen Content,”Applied Surface Science, vols. 130-132, pp. 202-207 (1998).
Zwierzak, et al., “Organophosphorus Esters—t-Butyl As Protecting Group In Phosphorylation Via Nucleophilic Displacement,”Tetrahedron, vol. 27, pp. 3163-3170 (1971).
Backer et al., “Esters Mixtes De L'Acide Tetrathio Orthosilicique”,Rev. Trav. Chim., vol. 61, pp. 500-512, 1942 (a statement of relevance is found in paragraph [0060] on p. 20 of the Applicant's Specification (see lines 9-11)).
Gordon, Roy G., et al “Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics” Chem. Mater. 2001, 13:2463-2464.
Haukka, et al., “Chemisorption of chromium acetylacetonate on porous high surface area silica,” Applied Surface Science 75, 1994, 220-227, 8 pages.
Ott, et al., “Modification of Porous Alumina Membranes Using A12O3Atomic Layer Controlled Deposition,” Chem. Matter, 1997, 9, pp. 707-714, 8 pages.
Puurunen, “Surface Chemistry of Atomic Layer Deposition: A Case Study for the Trimethyaluminum/water Process,” Journal of Applied Physics 97, 121301, 2005, 52 pages.
Voronkov, et al., “Reaction of TRIS (Trimethylsilyl) Phosphate with Salts of Inorganic and Organic Acids,” UDS 542.91:547.1′128′118, 1 page, 1978.
European Search Report for EP06026277, dated Feb. 27, 2007, 2 pages.
International Search Report and Written O
Becker Jill
Gordon Roy G.
Hausmann Dennis
Nguyen Ha Tran T
President and Fellows of Harvard College
Quinto Kevin
Wilmer Cutler Pickering Hale and Dorr LLP
LandOfFree
Vapor deposition of silicon dioxide nanolaminates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vapor deposition of silicon dioxide nanolaminates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor deposition of silicon dioxide nanolaminates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2667562