Vapor deposition method and apparatus

Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition

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4272481, 427255, 4272557, 427588, C23C 1622, C23C 1646

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active

057471193

ABSTRACT:
A vapor deposition method for forming at least one thin film on a substrate, wherein the time required to control the temperature of a substrate is minimized and the need for additional heating and cooling chambers to change the substrate temperature is obviated. A carry-in/carry-out chamber, heating chamber, and first and second film forming heating chambers are arranged about and connected to a transfer chamber by respective gate valves. The apparatus provides for a continuous film-forming process to be carried out under different operating conditions by controlling at least one of the following parameters: evacuation times for the first and second film forming chambers, the time for transporting the substrate from the first to the second film forming chamber by a carrier mechanism, the pressure in the transfer chamber, the evacuation waiting time before the film forming step, and the material gases introducing and pressure adjusting time before the film forming step. Accordingly, the size and cost of the apparatus are decreased, while productivity is increased.

REFERENCES:
patent: 4328258 (1982-05-01), Coleman
patent: 4675206 (1987-06-01), Ikegaya et al.
patent: 4773355 (1988-09-01), Reif et al.
patent: 4911103 (1990-03-01), Davis et al.
patent: 5151305 (1992-09-01), Matsumoto et al.
patent: 5230925 (1993-07-01), Ohmine
The Encyclopedia American V. 12, Int. Ed. pp. 318-320 (1978).
The Encyclopedia American, vol. 12, International Edition, pp. 318-320, 1978.

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