Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1997-12-29
2000-04-04
Gulakowski, Randy
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 11, 216 13, 216 24, 216 33, 216 41, 216 75, 216100, 445 25, 445 50, 445 51, 438 20, 438125, H01L 21302
Patent
active
060457112
ABSTRACT:
A vacuum seal suitable for use with field emission arrays is described. This seal has high reliability because the expansion coefficients of the metal and the glass are closely matched. Materials traditionally used for cathode and gate lines continue to be employed. To achieve this, a gap is introduced into each conductive line near the edges of the display. This gap is bridged by a material having an expansion coefficient that more closely matches that of the glass used for the seal and is the only material that contacts the seal. The bridge may be in the form of a deposited layer or it may be a discrete wire. A description of how the structure is manufactured is also provided.
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Tien Chih-Hao
Tsai Chun-hui
Wang Wen-Chun
Ackerman Stephen B.
Alanko Anita
Gulakowski Randy
Industrial Technology Research Institute
Saile George O.
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