Metal working – Barrier layer or semiconductor device making
Reexamination Certificate
2005-01-18
2005-01-18
Fourson, George (Department: 2823)
Metal working
Barrier layer or semiconductor device making
C118S050000, C438S908000
Reexamination Certificate
active
06843809
ABSTRACT:
A vacuum/purge operation of a loadlock chamber prevents an eddy phenomenon from occurring in the chamber and thereby prevents wafers from being polluted and damaged by particles in the chamber. A vacuum pump for providing the loadlock chamber with vacuum pressure, and a gas supply for providing the chamber with purge gas are connected to the loadlock chamber by an exhaust line and a gas supply line, respectively. At least one control valve is installed in each of the lines. At the time the state of pressure in the loadlock chamber is to be changed, the loadlock chamber is provided with both the vacuum pressure and the purge gas at rates that are inter-dependent to establish a flow of gases towards and into the exhaust line. Then, the supplying of one of the vacuum pressure and the purge gas is gradually reduced and cut off.
REFERENCES:
patent: 4643627 (1987-02-01), Bednorz et al.
patent: 6039770 (2000-03-01), Yang et al.
patent: 6216548 (2001-04-01), Park et al.
patent: 6323463 (2001-11-01), Davis et al.
patent: 6410889 (2002-06-01), Davis et al.
Fourson George
Samsung Electronics Co,. Ltd.
Toledo Fernando L.
Volentine Francos & Whitt P.L.L.C.
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