Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2011-05-24
2011-05-24
Olsen, Allan (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
C216S067000, C438S706000, C257SE21252, C257SE21257, C257SE21577, C257SE21579
Reexamination Certificate
active
07947189
ABSTRACT:
A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
REFERENCES:
patent: 5660047 (1997-08-01), Paganessi
patent: 5673750 (1997-10-01), Tsubone et al.
patent: 5810933 (1998-09-01), Mountsier et al.
patent: 5835334 (1998-11-01), McMillin et al.
patent: 5968847 (1999-10-01), Ye et al.
patent: 6500681 (2002-12-01), Christian et al.
patent: 6534416 (2003-03-01), Ye et al.
patent: 6547559 (2003-04-01), Hodos
patent: 6946387 (2005-09-01), Wada et al.
patent: 7179663 (2007-02-01), Chang
patent: 7402517 (2008-07-01), Yonker et al.
patent: 7667301 (2010-02-01), Nakamura et al.
patent: 2002/0067585 (2002-06-01), Fujiwara
patent: 2002/0192938 (2002-12-01), Wada et al.
patent: 2004/0196616 (2004-10-01), Koo et al.
patent: 2004/0247787 (2004-12-01), Mackie et al.
patent: 2005/0284571 (2005-12-01), Negishi et al.
patent: 2006/0223312 (2006-10-01), Yonker et al.
patent: 2007/0009649 (2007-01-01), Nakamura et al.
patent: 2008/0170969 (2008-07-01), Yoshioka et al.
patent: 2008/0245304 (2008-10-01), Yonker et al.
patent: 2009/0000741 (2009-01-01), Aramaki et al.
patent: 2009/0181545 (2009-07-01), Negishi et al.
patent: 2010/0055879 (2010-03-01), Harano et al.
patent: 63-274147 (1988-11-01), None
patent: 07-249586 (1995-09-01), None
patent: 09-097786 (1997-04-01), None
patent: 11-097516 (1999-04-01), None
patent: 2003-100718 (2003-04-01), None
patent: 2003-234326 (2003-08-01), None
Aramaki Tooru
Kanekiyo Tadamitsu
Kihara Hideki
Shirayone Shigeru
Tsubone Tsunehiko
Antonelli, Terry Stout & Kraus, LLP.
Hitachi High-Technologies Corporation
Olsen Allan
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