Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2007-04-10
2007-04-10
Vinh, Lan (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
C034S405000, C315S111010
Reexamination Certificate
active
11259147
ABSTRACT:
An etching processing apparatus1has a transfer chamber2, a plurality of processing chambers3and4, and a plurality of cassette chambers7and8. Inside the transfer chamber2, a transfer mechanism14is provided. A control device17pauses the operation of the vacuum pump16after closing an opening/closing valve15of a vacuum evacuating mechanism, which vacuum evacuates the transfer chamber2in which the transfer mechanism14is provided, when the operation of the transfer mechanism14is paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.
REFERENCES:
patent: 6274507 (2001-08-01), Narita et al.
patent: 6473995 (2002-11-01), Miyakawa et al.
patent: 2003/0230322 (2003-12-01), Hillman et al.
patent: 11-204508 (1999-07-01), None
S. Wolf and R.N. Ttauber, Silicon Processing for the VLSI Era, vol. 1—Process Technology, Lattice Press, 1986, pp. 348-353.□□.
Hosaka Toshiki
Kitazawa Takashi
Kitoku Toshihiko
Niwa Shinji
Sanda Atsuo
Dahimene Mahmoud
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
Vinh Lan
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