Vacuum processing apparatus

Details Vacuum processing apparatus Vacuum processing apparatus

1995-02-27

1997-03-04

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118728, 1566451, C23C 1602

Patent

active

056075103

ABSTRACT:
To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump. Further, the exhaust arrangement can be provided at a shifted position so as to allow a work space beneath a work table.

REFERENCES:
patent: 4431473 (1984-02-01), Okano et al.
patent: 5000225 (1991-03-01), Murdoch
patent: 5391260 (1995-02-01), Makino et al.
Samukawa, "Perfect Selective, Highly Anisotropic, and High Rate ECR Plasma Etching for N.sup.+ Poly-Si and WSI/Poly-Si", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, pp. 207-210, 1990.

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