Vacuum plasma processor including control in response to DC...

Details Vacuum plasma processor including control in response to DC... Vacuum plasma processor including control in response to DC...

2007-10-02

2007-10-02

Philogene, Haissa (Department: 2821)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With measuring, sensing, detection or process control means

C156S345410, C156S345480, C438S005000, C438S010000, C118S7230ER, C315S111210

Reexamination Certificate

active

10855707

ABSTRACT:
A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.

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