Vacuum plasma processor having coil with minimum magnetic field

Coating apparatus – Gas or vapor deposition – With treating means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723IR, C23C 1600

Patent

active

058006192

ABSTRACT:
A substantially planar coil of a vacuum plasma processor has plural turns for exciting gas in the processor to a plasma state in response to r.f. coil energization. The coil is located outside the processor and surrounded by a shield tending to cause magnetic flux coupled from peripheral portions of the coil to the gas to be less than magnetic flux coupled from interior portions of the coil to the gas. The coil is arranged so magnetic flux derived from a center portion of an area circumscribed by the coil is less than the magnetic flux derived from all other areas circumscribed by the coil. The magnetic flux is such that the density of the plasma in the processor on a processed substrate is relatively uniform even though the coil exhibits transmission line properties so there are substantial peak-to-peak current variations along the length of the coil.

REFERENCES:
patent: 4340482 (1982-07-01), Sternberg
patent: 4440108 (1984-04-01), Little et al.
patent: 4612077 (1986-09-01), Tracy et al.
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4617079 (1986-10-01), Tracy et al.
patent: 4826585 (1989-05-01), Davis
patent: 4948458 (1990-08-01), Ogle
patent: 5198718 (1993-03-01), Davis et al.
patent: 5216329 (1993-06-01), Pelleteir
patent: 5226967 (1993-07-01), Chen et al.
patent: 5231334 (1993-07-01), Paranjpe
patent: 5234529 (1993-08-01), Johnson
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5261962 (1993-11-01), Hamamoto et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5280154 (1994-01-01), Cuomo et al.
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5309063 (1994-05-01), Singh
patent: 5368710 (1994-11-01), Chen et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5405480 (1995-04-01), Benzing et al.
patent: 5433812 (1995-07-01), Cuomo et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5540824 (1996-07-01), Yin et al.
patent: 5558722 (1996-09-01), Okumura et al.
Fukusawa et al., "RF Self-Bias Characteristics in Inductively Coupled Plasma," JPN. J. Appl. Phys. vol. 32 (1993) pp. 6076-6079, Part 1, No. 12B, Dec. 1993.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Vacuum plasma processor having coil with minimum magnetic field does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vacuum plasma processor having coil with minimum magnetic field , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vacuum plasma processor having coil with minimum magnetic field will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-265911

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.