Vacuum packaged single crystal silicon device

Details Vacuum packaged single crystal silicon device Vacuum packaged single crystal silicon device

2008-06-30

2010-02-16

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S022000, C438S025000, C438S048000, C257SE27112

Reexamination Certificate

active

07662655

ABSTRACT:
A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

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