Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-10-27
1994-09-20
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257 99, 257101, 257102, 257264, 313308, 313309, 313336, 313351, 156644, 156653, 156656, 156657, 1566591, H01L 2348, H01L 2944, H01J 146, B23P 1500
Patent
active
053492170
ABSTRACT:
A method for producing a vacuum microelectronics device ( 10 ) on a substrate ( 12 ) and insulating dielectric (14) first forms an electrode base (16) on the insulating dielectric (14). Next, electrode base (16) is covered with a first organic spacer (42) having an aperture (44) for exposing a portion of electrode base (16). Next, a metal layer (46) is applied over organic spacer (42) to form emitter (18) within aperture (44). After removal of organic spacer (42) and metal layer (46), a second organic spacer (44) and a grid material (20) are applied over emitter (18) and electrode base (16). Next, a third organic spacer (50) and an anode metal (22) with access apertures ( 34 ) and ( 36 ) are placed over the structure. After removing organic spacers (48) and (50), anode metal (22) is sealed with metal (26) to close off access apertures ( 34 ) and ( 36 ). The result is a vacuum microelectronics device (10) usable is a triode or diode.
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Brill Charles A.
Crane Sara W.
Donaldson Richard L.
Jr. Carl Whitehead
Kesterson James C.
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