Vacuum film forming apparatus

Coating apparatus – Gas or vapor deposition – Multizone chamber

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118725, C23C 1600

Patent

active

052845214

ABSTRACT:
A vacuum film forming apparatus including a vacuum vessel having an interior divided into a first vacuum chamber and a second vacuum chamber. First evacuating means is arranged for the first vacuum chamber while it is communicated with the first vacuum chamber, and second evacuating means is arranged for the second vacuum chamber while it is communicated with the second vacuum chamber. In addition, a substrate heater is arranged in the first vacuum chamber, and gas supplying means is arranged in the second vacuum chamber. The apparatus further includes a substrate holder for holding a substrate thereon such that a film forming surface of the substrate is oriented toward the second vacuum chamber. The substrate holder is arranged at a position where the first vacuum chamber and the second vacuum chamber are gastightly isolated from each other with the substrate holder interposed therebetween together with the substrate.

REFERENCES:
patent: 3156591 (1964-11-01), Hale et al.
patent: 3394678 (1968-07-01), Edwards
patent: 4767251 (1988-08-01), Whang
patent: 4895107 (1990-01-01), Yano
patent: 4989543 (1991-02-01), Schmitt
patent: 5107791 (1992-04-01), Hirokawa
patent: 5180432 (1993-01-01), Hansen
"Silicon epitaxy on germanium using a SiH.sub.4 low-pressure chemical-vapor deposition process" Fujinaga et al. Japan Vacuum Society Technology, B5(6) Nov./Dec. 1987, pp. 1551-1554.
"High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technology" Ohmi et al., Applied Physics Letter 52(14) Apr. 4th, 1988, pp. 1173-1175.

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