Drying and gas or vapor contact with solids – Process – With nondrying treating of material
Patent
2000-01-28
2000-09-05
Gravini, Stephen
Drying and gas or vapor contact with solids
Process
With nondrying treating of material
34407, 134 254, F26B 700
Patent
active
061124303
ABSTRACT:
A vacuum dryer and a method of drying a semiconductor device using the same are provided. In the present invention, a vacuum dryer using isopropyl alcohol vapor, including an outer bath, an inner bath, a main water supply line, a supplementary water supply line, an inner bath drain line, and an outer bath drain line, is provided. After cleaning the inside of the vacuum dryer, the inner bath is filled with the supplied deionized water and the deionized water is continuously overflowed. Then, the semiconductor substrate is loaded into the inner bath of the vacuum dryer to which the deionized is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.
REFERENCES:
patent: 4507539 (1985-03-01), Sando et al.
patent: 4841645 (1989-06-01), Bettcher et al.
patent: 5203927 (1993-04-01), Yoshida et al.
patent: 5315766 (1994-05-01), Roberson, Jr. et al.
patent: 5520744 (1996-05-01), Fujikawa et al.
patent: 5553396 (1996-09-01), Kato et al.
patent: 5727578 (1998-03-01), Matthews
patent: 5800626 (1998-09-01), Cohen et al.
patent: 5864966 (1999-02-01), Singletery
patent: 6027574 (2000-02-01), Fishkin et al.
Lee Jong-jae
Park Chan-geun
Gravini Stephen
Samsung Electronics Co,. Ltd.
LandOfFree
Vacuum dryer and method of drying semiconductor device using the does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vacuum dryer and method of drying semiconductor device using the, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vacuum dryer and method of drying semiconductor device using the will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2199640