Vacuum die attach for integrated circuits

Details Vacuum die attach for integrated circuits Vacuum die attach for integrated circuits

1988-09-12

1991-09-10

Ramsey, Kenneth J.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228221, 357 67, B23K 103

Patent

active

050466569

ABSTRACT:
A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required.

REFERENCES:
patent: 3298093 (1967-01-01), Cohen
patent: 3317106 (1967-05-01), Dix
patent: 3418709 (1968-12-01), Herlet et al.
patent: 3651562 (1972-03-01), Hambleton
patent: 3785892 (1974-01-01), Terry et al.
patent: 4810671 (1989-03-01), Bhattacharyya

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