Vacuum deposition apparatus with dust collector electrode

Details Vacuum deposition apparatus with dust collector electrode Vacuum deposition apparatus with dust collector electrode

1989-05-08

1991-01-29

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118726, 156610, 427 35, 427 38, C23C 1650

Patent

active

049878573

ABSTRACT:
A vacuum deposition apparatus has a vacuum evaporation chamber provided therein with a dust collector electrode(s) and optionally with an electron beam source. When a DC voltage is applied to the dust collector electrode(s), large polarized dust particles and molecular clusters present in a space in the chamber are attracted to the dust collector electrode(s) by virtue of an electric force given thereto by application of the voltage thereto to enable a deposited film to be formed with a decrease in the number of surface defects thereof. The electron beam source, if present, serves to electrify or ionize only dust particles and molecular clusters having a large scattering cross section. A DC voltage reverse in polarity to that of the dust collector electrode(s) may be applied between a secondary molecular beam source and a substrate, a dopant substance being provided in the secondary molecular beam source to increase the amount of doping of growing crystals.

REFERENCES:
patent: 3583361 (1971-06-01), Laudel, Jr.
patent: 4217855 (1980-08-01), Takagi
patent: 4559901 (1985-12-01), Morimoto et al.
patent: 4687939 (1987-08-01), Miyauchi
patent: 4805555 (1989-02-01), Itoh
Houghton et al., "A Preliminary Study of Impurities and Defects In Si-MBE Layers", 326, Journal of Crystal Growth, 81 (1987).
IBM Technical Disclosure Bulletin, "Reducing Dust-Induced Pinholes in Sputtered Films," by E. Stern, vol. 12, No. 1, Jun. 1969.
Morton Panish et al., "Molecular Beam Epitaxy," 8045, IEEE Spectrum, vol. 17 (1980), Apr., No. 4.

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