Vacancy, dominsated, defect-free silicon

Details Vacancy, dominsated, defect-free silicon Vacancy, dominsated, defect-free silicon

2005-01-11

2005-01-11

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

Reexamination Certificate

active

06840997

ABSTRACT:
The present invention relates to a process for growing a single crystal silicon. The process including controlling a growth velocity, v, and an average axial temperature gradient, G0, during the growth of the constant diameter portion of the crystal over the temperature range from solidification to a temperature of no less than about 1325° C., to cause the formation of a first axially symmetrical region in which vacancies, upon cooling of the ingot from the solidification temperature, are the predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects, wherein the first axially symmetric region has a width of at least about 50% of the radius of the constant diameter portion of the ingot.

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