V-gate transistor

Details V-gate transistor V-gate transistor

1998-10-01

2000-06-20

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257401, 257327, 257389, H01L 2994, H01L 2908

Patent

active

060780789

ABSTRACT:
An integrated circuit and a method of making a transistor thereof are provided. The integrated circuit includes a substrate and a plurality of transistors positioned on a plurality of active areas. Each of the transistors has a gate dielectric layer with a V-shaped cross-section positioned on one of the plurality of active areas, a gate electrode positioned on the gate dielectric layer, a first source/drain region positioned in the substrate, and a second source/drain region positioned in the substrate in spaced-apart relation to the first source/drain region to define a channel region beneath the gate dielectric layer. The V-shaped gate dielectric layer requires less horizontal substrate area, enabling higher packing density for a given substrate.

REFERENCES:
patent: 4295924 (1981-10-01), Garnache et al.
patent: 4335450 (1982-06-01), Thomas
patent: 5523600 (1996-06-01), Kapoor
patent: 5808340 (1998-09-01), Wollesen et al.
patent: 5905283 (1999-05-01), Kasai
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 1--Process Technology; pp. 531-532; 1986.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 3--The Submicron MOSFET; pp. 274-294, 307-308 and 623-633; 1995.

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