UV treatment of STI films for increasing tensile stress

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Reexamination Certificate

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C427S558000, C427S579000, C438S308000, C438S788000

Reexamination Certificate

active

07622162

ABSTRACT:
Using UV radiation, methods to modify shallow trench isolation (STI) film tensile stress to generate channel strain without adversely impacting the efficiency of the transistor fabrication process are disclosed. Methods involve a two phase process: a deposition phase, wherein silanol groups are formed in the silicon dioxide film, and a bond reconstruction phase, wherein UV radiation removes silanol bonds and induce tensile stress in the silicon dioxide film.

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