UV transparent oxynitride deposition in single wafer PECVD syste

Details UV transparent oxynitride deposition in single wafer PECVD syste UV transparent oxynitride deposition in single wafer PECVD syste

1992-02-25

1993-11-09

Wilczewski, Mary

Fishing, trapping, and vermin destroying

148DIG114, H01L 21205

Patent

active

052602362

ABSTRACT:
A high density, high frequency, plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on a semiconductor integrated circuit wafer. The wafer rests on a grounded electrode while a second electrode disperses gases over the wafer. The second electrode disperses the gases in the same manner as a showerhead. An radio-frequency (RF) potential applied to the showerhead electrode causes the gases to react under specific temperature, pressure, and electrode spacing conditions. Furthermore, the present invention is a low particulate process. The process forms a film of high UV transparency. The chamber is cleaned after removal of the wafer, and gas lines are evacuated. This results in a low particle process. The film have low within-wafer and wafer-to-wafer variation of thickness and refractive index, low pattern sensitivity of thickness of the deposited film, high deposition rate, high moisture resistance (low wet etched rate), low density of SiH and NH bonds, no pinholes, low stress, good sidewall step average, and high resistance to film cracking.

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In Parent Case Ser No. 711935 Claassen et al., "Characterization of Silicon-Oxynitride Films Deposited by Plasma-Enhanced CVD", J. Electrochem Soc., vol. 133, No. 7, pp. 1458-1464, Jul. 1986.

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