UV-enhanced dry stripping of silicon nitride films

Details UV-enhanced dry stripping of silicon nitride films UV-enhanced dry stripping of silicon nitride films

1994-08-18

1996-07-09

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566571, 216 66, 216 79, 437241, H01L 2100, C03C 1500, B44C 122

Patent

active

055341071

ABSTRACT:
A UV light-enhanced process for rapidly stripping films of silicon nitride in a dry reaction environment, which may be free of plasma or plasma effluents. This process is carried out in a sealed reactor which allows simultaneous exposure of a substrate wafer to a polyatomic fluorine containing gas which can be photodissociated by UV radiation to produce atomic fluorine and to UV radiation. Silicon nitride stripping rates in excess of 500 .ANG./min are readily obtainable with UV-stimulated fluorine-based processes, while maintaining the bulk wafer temperature below 300.degree. C. Selectivities for silicon nitride-to-silicon oxide etching of greater than 30 can be achieved for the stripping of silicon nitride LOCOS mask layers in the presence of field oxide and pad oxide layers when a chlorine or bromine containing gas which can be photodissociated by UV radiation to produce atomic chlorine or bromine is used in mixture with the fluorine containing gas. Selectivity and etch rate are controlled through UV lamp exposure, substrate temperature, and additions of nitrogen diluent, and photodissociable chlorine or bromine containing gases. The process addresses many of the limitations of plasma-downstream etch tools for dry silicon nitride stripping, including complete elimination of charged particles and sputtered contaminants associated with plasma effluents.

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