Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2005-05-17
2005-05-17
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S781000
Reexamination Certificate
active
06893985
ABSTRACT:
A dielectric layer on a semiconductor substrate is made porous by radiation with UV light. The dielectric material contains a photosensitive moiety that absorbs UV radiation and dissociates from the dielectric material. The UV-activated material then may be diffused to create pores in the dielectric layer, and to provide a dielectric layer having a low dielectric constant.
REFERENCES:
patent: 6670285 (2003-12-01), Hawker et al.
patent: 6703324 (2004-03-01), Wong
patent: 6716767 (2004-04-01), Shih et al.
Ghyka Alexander
Trop Pruner & Hu P.C.
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