Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-01-16
2007-01-16
Lee, Calvin (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
Reexamination Certificate
active
10978540
ABSTRACT:
In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X—CH2—(CH2)n—CH2—X or X—Si(CH3)2—(CH2)n—Si(CH3)2—X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X—CH2—(CH2)m(CXH)(CH2)o—CH2—X or X—Si(CH3)2—(CH2)m(CXH)(CH2)o—Si(CH3)2—X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.
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Infineon - Technologies AG
Lee Calvin
Slater & Matsil L.L.P.
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