Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1999-03-05
2000-02-01
Mulpuri, Savitri
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438483, H01L 2120
Patent
active
06020253&
ABSTRACT:
A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiarybutylbis-(dimethylamino)phosphine is prepared by reacting a phosphorus trihalide, PX.sub.3, with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX. The resultant product is treated with lithium dimethylamide reagent LiN(CH.sub.3).sub.2. Tertiarybutylbis-(dimethylamino)phosphine is then recovered from the reaction mixture. Phosphorus-containing semiconductor materials are formed by chemical vapor deposition by means of bubbling a carrier gas through the new compound and then transporting the ((CH.sub.3).sub.3 C)((CH.sub.3).sub.2 N).sub.2 P with the carrier gas to a heated substrate. Additional elements from groups II, III, V, and VI of the periodic table are then deposited on the substrate to form the Phosphorus-containing semiconductor materials.
REFERENCES:
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Hill, C.W., "Low Pressure Pyrolysis Studies of a New Phosphorus Precursor: ertiarybutylbis (dimethylamino) phosphine." Journal of Electronic Materials, vol. 25, No. 9, 1996, pp. 1434-1438, 1996.
Hill, C.W., "A comparison of the reactions of phosphorus precursors on deposited GaP and InP films." Journal of Crystal Growth 181, (1997), pp. 321-325, 1997.
Ryu, H.H., "Chemical beam epitaxy of InP without precracking using tertiarybutylbis (dimethylamino) phosphine." Journal of Crystal Growth 172 (1997) pp. 1-4, 1997.
Gedridge, Jr. Robert W.
Groshens Thomas J.
Higa Kelvin T.
Baugher Jr. Earl H.
Bokar Gregory M.
Mulpuri Savitri
The United States of America as represented by the Secretary of
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