Use of TEOS oxides in integrated circuit fabrication processes

Details Use of TEOS oxides in integrated circuit fabrication processes Use of TEOS oxides in integrated circuit fabrication processes

2008-05-13

2008-05-13

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S751000, C438S763000, C438S787000

Reexamination Certificate

active

11326547

ABSTRACT:
A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide hard mask.

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