Use of supercritical fluid for low effective dielectric...

Details Use of supercritical fluid for low effective dielectric... Use of supercritical fluid for low effective dielectric...

2007-02-20

2007-02-20

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S745000, C257SE21002

Reexamination Certificate

active

10902243

ABSTRACT:
An embodiment of the invention is a method of manufacturing an integrated circuit. The method includes forming a capping layer of a back end structure (step706), drilling an extraction line from the capping layer to an inter-metal dielectric layer (step708), performing a supercritical fluid process to remove portions of the inter-metal dielectric layer that are coupled to the extraction line (step710): thereby forming a denuded dielectric region. Another embodiment of the invention is an integrated circuit2having a back-end structure5coupled to a front-end structure4.The back-end structure5having a first metal level22.The first metal level22having metal interconnects15and an inter-metal dielectric layer19.The back-end structure5further containing an extraction line24and a denuded dielectric region25coupled to the extraction line24.

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